A fast transfer-free synthesis of high-quality monolayer graphene on insulating substrates by a simple rapid thermal treatment.
نویسندگان
چکیده
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge. In this paper, we report on a simple rapid thermal treatment (RTT) method for the fast and direct growth of high-quality, large-scale monolayer graphene on a SiO2/Si substrate from solid carbon sources. The stack structure of a solid carbon layer/copper film/SiO2 is adopted in the RTT process. The inserted copper film does not only act as an active catalyst for the carbon precursor but also serves as a "filter" that prevents premature carbon dissolution, and thus, contributes to graphene growth on SiO2/Si. The produced graphene exhibits a high carrier mobility of up to 3000 cm(2) V(-1) s(-1) at room temperature and standard half-integer quantum oscillations. Our work provides a promising simple transfer-free approach using solid carbon sources to obtain high-quality graphene for practical applications.
منابع مشابه
Synthesis of Freestanding Graphene on SiC by a Rapid-Cooling Technique.
Graphene has a negative thermal expansion coefficient; that is, when heated, the graphene lattice shrinks. On the other hand, the substrates typically used for graphene growth, such as silicon carbide, have a positive thermal expansion coefficient. Hence, on cooling graphene on SiC, graphene expands but SiC shrinks. This mismatch will physically break the atomic bonds between graphene and SiC. ...
متن کاملDirect writing of graphene patterns on insulating substrates under ambient conditions
To unleash the full potential of graphene in electronics and optoelectronics, high-quality graphene patterns on insulating substrates are required. However, existing methods generally follow a "synthesis + patterning" strategy, which are time consuming and costly for fabricating high-quality graphene patterns on desired substrates. We developed a nanofabrication process to deposit high-quality ...
متن کاملRegular Paper In Situ Study on Oxygen Etching of Surface Buffer Layer on SiC(0001) Terraces
Thermal decomposition of SiC has been used for the fabrication of high quality monolayer graphene and graphene nanoribbons on semi-insulating substrates. In this work, we propose a selective oxygen etching method to remove buffer layers on SiC surfaces that are connected to monolayer graphene formed from step edges. A thermal treatment in an extreme low partial pressure oxygen diluted by argon ...
متن کاملAtomically thin mica flakes and their application as ultrathin insulating substrates for graphene.
By mechanical exfoliation, it is possible to deposit atomically thin mica flakes down to single-monolayer thickness on SiO2/Si wafers. The optical contrast of these mica flakes on top of a SiO2/Si substrate depends on their thickness, the illumination wavelength, and the SiO2 substrate thickness, and can be quantitatively accounted for by a Fresnel-law-based model. The preparation of atomically...
متن کاملLarge-area high-throughput synthesis of monolayer graphene sheet by Hot Filament Thermal Chemical Vapor Deposition
We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to pr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Nanoscale
دوره 8 5 شماره
صفحات -
تاریخ انتشار 2016